ZnSe and ZnO film growth by pulsed-laser deposition

Y. R. Ryu; S. Zhu; S. W. Han; H. W. White; P. F. Miceli; H. R. Chandrasekhar

doi:10.1016/S0169-4332(97)00681-8

ZnSe and ZnO film growth by pulsed-laser deposition

Y. R. Ryu^*
, S. Zhu
, S. W. Han
, H. W. White
, P. F. Miceli
, H. R. Chandrasekhar

^*Corresponding author for this work

Physics Education

University of Missouri

Research output: Contribution to journal › Journal article › peer-review

36 Scopus citations

Abstract

ZnSe and ZnO films have been deposited on (001) GaAs substrates under different pressures by pulsed-laser deposition (PLD) with a 193 nm laser beam. The ambient pressures were changed from 8 × 10 ^-6 to 5 × 10 ^-2 Torr with high-purity argon gas for ZnSe and oxygen gas for ZnO. X-ray diffraction (XRD) measurement was performed on these samples. The FWHM's of X-ray theta-rocking curves for the (004) peaks of ZnSe films were less than 0.5°. X-ray data show that high-quality ZnO films can be also synthesized by PLD.

Original language	English
Pages (from-to)	496-499
Number of pages	4
Journal	Applied Surface Science
Volume	127-129
DOIs	https://doi.org/10.1016/S0169-4332(97)00681-8
State	Published - 1998.05

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@article{64526b93a5eb4d8f939160f8e1b08fd3,

title = "ZnSe and ZnO film growth by pulsed-laser deposition",

abstract = " ZnSe and ZnO films have been deposited on (001) GaAs substrates under different pressures by pulsed-laser deposition (PLD) with a 193 nm laser beam. The ambient pressures were changed from 8 × 10 -6 to 5 × 10 -2 Torr with high-purity argon gas for ZnSe and oxygen gas for ZnO. X-ray diffraction (XRD) measurement was performed on these samples. The FWHM's of X-ray theta-rocking curves for the (004) peaks of ZnSe films were less than 0.5°. X-ray data show that high-quality ZnO films can be also synthesized by PLD.",

author = "Ryu, \{Y. R.\} and S. Zhu and Han, \{S. W.\} and White, \{H. W.\} and Miceli, \{P. F.\} and Chandrasekhar, \{H. R.\}",

year = "1998",

month = may,

doi = "10.1016/S0169-4332(97)00681-8",

language = "English",

volume = "127-129",

pages = "496--499",

journal = "Applied Surface Science",

issn = "0169-4332",

}

TY - JOUR

T1 - ZnSe and ZnO film growth by pulsed-laser deposition

AU - Ryu, Y. R.

AU - Zhu, S.

AU - Han, S. W.

AU - White, H. W.

AU - Miceli, P. F.

AU - Chandrasekhar, H. R.

PY - 1998/5

Y1 - 1998/5

N2 - ZnSe and ZnO films have been deposited on (001) GaAs substrates under different pressures by pulsed-laser deposition (PLD) with a 193 nm laser beam. The ambient pressures were changed from 8 × 10 -6 to 5 × 10 -2 Torr with high-purity argon gas for ZnSe and oxygen gas for ZnO. X-ray diffraction (XRD) measurement was performed on these samples. The FWHM's of X-ray theta-rocking curves for the (004) peaks of ZnSe films were less than 0.5°. X-ray data show that high-quality ZnO films can be also synthesized by PLD.

AB - ZnSe and ZnO films have been deposited on (001) GaAs substrates under different pressures by pulsed-laser deposition (PLD) with a 193 nm laser beam. The ambient pressures were changed from 8 × 10 -6 to 5 × 10 -2 Torr with high-purity argon gas for ZnSe and oxygen gas for ZnO. X-ray diffraction (XRD) measurement was performed on these samples. The FWHM's of X-ray theta-rocking curves for the (004) peaks of ZnSe films were less than 0.5°. X-ray data show that high-quality ZnO films can be also synthesized by PLD.

UR - https://www.scopus.com/pages/publications/0032072070

U2 - 10.1016/S0169-4332(97)00681-8

DO - 10.1016/S0169-4332(97)00681-8

M3 - Journal article

AN - SCOPUS:0032072070

SN - 0169-4332

VL - 127-129

SP - 496

EP - 499

JO - Applied Surface Science

JF - Applied Surface Science

ER -

ZnSe and ZnO film growth by pulsed-laser deposition

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